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TSDF1205W/TSDF1205RW
Silicon NPN High Frequency Transistor
Electrostatic sensitive device. Observe precautions for handling.
Applications
For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.
Features
D Low-power applications D Low noise figure D High transition frequency
2
1
1
2
13 653
13 566
13 654
13 566
3
4
4
3
TSDF1205W Marking: WF0 Plastic case (SOT 343) 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter
TSDF1205RW Marking: W0F Plastic case (SOT 343R) 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter
Absolute Maximum Ratings
Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb 132C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 9 4 2 12 40 150 -65 to +150 Unit V V V mA mW C C
Maximum Thermal Resistance
Parameters Junction ambient , mounted on glass fibre printed board (25 x 20 x 1.5) mm3, plated with 35 mm Cu Symbol RthJA Maximum 450 Unit K/W
TELEFUNKEN Semiconductors Rev. A3, 28-Oct-97
1 (5)
TSDF1205W
Electrical DC Characteristics
Tamb = 25_C Parameters / Test Conditions Collector emitter cut-off current VCE = 12 V, VBE = 0 Collector-base cut-off current VCB = 10 V Emitter-base cut-off current VEB = 1 V Collector-emitter breakdown voltage IC = 1 mA Collector-emitter saturation voltage IC = 5 mA, IB = 0.5 mA DC forward current transfer ratio VCE = 2 V, IC = 2 mA 1) tp / T = 0.01, tp = 0.3 ms Symbol ICES ICBO IEBO V(BR)CEO1) VCEsat hFE 50 4 0.1 120 0.5 250 Min. Typ. Max. 100 100 2 Unit
mA
nA
mA
V V
Electrical AC Characteristics
Tamb = 25_C Parameters / Test Conditions Transition frequency VCE = 2 V, IC = 5 mA, f = 1 GHz Collector-base capacitance VCB = 1 V, f = 1 MHz Collector-emitter capacitance VCE = 1 V, f = 1MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 2 V, IC = 2 mA, ZS = ZSopt, ZL = 50 W, f = 2 GHz Power gain VCE = 2 V, IC = 2 mA, f = 2 GHz, (@Fopt) VCE = 2 V, IC = 5 mA, ZS = ZSopt, ZL = 50 W f = 2 GHz Transducer gain VCE = 2 V, IC = 5 mA, Z0 = 50 W, f = 2 GHz Symbol fT Ccb Cce Ceb Min. Typ. 12 0.2 0.35 0.15 Max. Unit GHz pF pF pF
F Gpe Gpe S21e 2
1.3 11.5 18 12.5
dB dB dB dB
2 (5)
TELEFUNKEN Semiconductors Rev. A3, 28-Oct-97
TSDF1205W/TSDF1205RW
Typical Characteristics (Tj = 25_C unless otherwise specified)
C cb - Collector Base Capacitance ( pF ) 0
14284
100 P tot - Total Power Dissipation ( mW ) 80 60 40 20 0 20 40 60 80 100 120 140 160 Tamb - Ambient Temperature ( C )
0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 VCB - Collector Base Voltage ( V )
14286
Figure 1.. Total Power Dissipation vs. Ambient Temperature
Figure 3.. Collector Base Capacitance vs. Collector Base Voltage
3.0
16 fT - Transition Frequency ( GHz ) 14 12 10 8 6 4 2 0 0
14285
f=1GHz VCE=3V F - Noise Figure ( dB ) 2.5 2.0 1.5 1.0 0.5 0 2 4 6 8 10 12 14
14287
VCE=2V f=2GHz ZS=50W
VCE=2V
0
1
2
3
4
5
6
IC - Collector Current ( mA )
IC - Collector Current ( mA )
Figure 2.. Transition Frequency vs. Collector Current
Figure 4.. Noise Figure vs. Collector Current
TELEFUNKEN Semiconductors Rev. A3, 28-Oct-97
3 (5)
TSDF1205W
Dimensions of TSDF1205W in mm
96 12237
Dimensions of TSDF1205RW in mm
96 12238
4 (5)
TELEFUNKEN Semiconductors Rev. A3, 28-Oct-97
TSDF1205W/TSDF1205RW
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TELEFUNKEN Semiconductors Rev. A3, 28-Oct-97
5 (5)

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